PUBLICATIONS

1978-1986 • 1987-1992 • 1993-1996 • 1997-2009

Review Articles

  • "Diffusive Charge Transport in Graphene on SiO2," Solid State Communications, in press 2009, (J.-H. Chen, C. Jang, M. Ishigami, S. Xiao, W.G. Cullen, E.D. Williams, M.S. Fuhrer)
  • "Nanoscale Structures: Lability, Length Scales, and Fluctuations," Materials Research Society Bulletin, September 2004, p. 621-629 (E.D.Williams). [ Pdf]
  • "Nanoscale Fluctuations at Solid Surfaces," Physics Today 52 24-28 (1999) (Z. Torozckai and E.D. Williams). [ Pdf]
  • "Steps on Surfaces: Experiment and Theory," Surface Sci. Reports 34, 171-294, 1999, (H.-C. Jeong and E.D. Williams). doi:10.1016/S0167-5729(98)00010-7
  • "Thermodynamics and Statistical Mechanics of Surfaces," in Handbook of Surface Science, Vol. I, W.N. Unertl, Ed., Elsevier: Amsterdam, 1996, p. 51 99, (E.D. Williams and N.C. Bartelt).
  • "Surface Steps and Surface Morphology: Understanding Macroscopic Phenomena from Atomic Observations," Surface Sci. 299/300, 502 (1994), (E.D. Williams).
  • "Thermodynamics of Surface Morphology," Science 251, 393 (1991), (E.D. Williams and N.C. Bartelt).

2009

"Surface roughness of ultrathin and commercial SiO2" Submitted (2009) (T. L Moore, B. R. Conrad, B. C. Riddick, and E. D. Williams)

"Characterizing Voltage Contrast in Photoelectron Emission Microscopy," Submitted (2009) (Vinod K. Sangwan, Vincent W. Ballarotto, Karen Siegrist and Ellen D. Williams)

"Defect Scattering in Graphene," Physical Review Letters in press (2009) (J. H. Chen, W. G. Cullen, C. Jang, M. S. Fuhrer and E. D. Williams).

"Pentacene islands grown on ultra-thin SiO2," Surface Science Letters 603(3); L27-L30 (2009) (B.R. Conrad, W.G. Cullen, B.C. Riddick, E.D. Williams). doi:10.1016/j.susc.2008.12.020

2008

"Vertical Integration on Plastic Substrates using Transfer Printing," Applied Physics Letters 93 193113 (2008) (A. J. Tunnell, V. W. Ballarotto,D. R. Hines, and E. D. Williams).

"Printing-Induced Improvements of Organic Thin-Film Transistors" Organic Electronics, 9 507-514 (2008) (A. J. Tunnell, D. R. Hines, Elba Gomar-Nadal and E. D. Williams) doi:10.1016/j.orgel.2008.02.012

"Effect of impurities on pentacene thin film growth for field-effect transistors," J. Phys. Chem. C 112, 5646-5650 2008, (Elba Gomar-Nadal, Brad R. Conrad, W.G. Cullen, E. D. Williams) doi:10.1021/jp711622z

"Transfer Printing as a Method for Fabricating Hybrid Devices on Flexible Substrates", SPIE proceedings, in press (2008), (D. R. Hines, A. E. Southard, A. Tunnell, V. Sangwan, T. Moore, J.-H. Chen, M. S. Fuhrer and E. D. Williams).

"On the Origins of 1/f Noise in Carbon Nanotube Transistors", Phys. Rev. B 77, 033407 (2008), (D. Tobias, M. Ishigami, A. Tselev, P. Barbara, E. D. Williams, C.J. Lobb, M. S. Fuhrer) doi:10.1109/TNANO.2007.892052

"Impurity Decoration for Crystal Shape Control: C60 on Ag(111)", submitted (2007), ( T. J. Stasevich, Chenggang Tao, William G. Cullen, Ellen D. Williams, and T.L. Einstein.)

"Charged impurity scattering in graphene", Nature Physics, 4, 377- 381 (2008) (J.H. Chen, C. Jang, M.S. Fuhrer, E.D. Williams and M. Ishigami) doi:10.1038/nphys935

"Effect of Impurities on Pentacene Island Nucleation", Phys. Rev. B 77, 205328 (2008) (B. Conrad, E. Gomar-Nadal, W. G. Cullen, A. Pimpinelli, T. L. Einstein and E. D. Williams) doi:10.1103/PhysRevB.77.205328

"Dynamic interfaces in an organic thin film", Proceedings of the National Academy of Science, 105, 16418-16425 2008 (C.G. Tao, Q. Liu, B. Riddick, W.G.Cullen, J. Reutt-Robey, J.D. Weeks and E.D. Williams).

"Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering", Physical Review Letters 101 146805 2008 (C. Jang, S. Adam, J.-H. Chen, E.D. Williams S. Das Sarma, M.S. Fuhrer).

"Facile fabrication of suspended as-grown carbon nanotube devices ", Applied Physics Letters, 93, 113112 (2008) (V.K. Sangwan, V. W. Ballarotto, M. S. Furher, E.D. Williams).

2007

"Percolative Effects on Noise in Pentacene thin film transistors", Appl. Phys. Letters, 91 242110 (2007) (B. Conrad, W.G. Cullen, W. Yan, and E.D. Williams). doi:10.1063/1.2823577

"Transfer Printing Methods for the Fabrication of Flexible Organic Electronics," Journal of Applied Physics 101 0114503(1-9), (2007), (D.R. Hines, V.W. Ballarotto, E.D. Williams, Y. Shao, S.A. Solin). DOI:10.1063/1.2403836

"Spatial First-passage Statistics of Al/Si(111)-(root3xroot3) Step Fluctuations", Physical Review E 75, 021603 (2007) (B. R. Conrad, W. G. Cullen, D. B. Dougherty*, I. Lyubinetsky†, E. D. Williams) doi:10.1103/PhysRevE.75.021603

"Transmission Line Impedance of Carbon Nanotube Thin Films for Chemical Sensing," Applied Physics Letters, 90, 123510 (2007). (G. Esen, M. S. Fuhrer, M. Ishigami and E.D. Williams). doi:10.1063/1.2709995

"Generalized survival in step fluctuations," Physical Review E 76 021601 (2007) (C.G. Tao, W.G. Cullen, E.D. Williams, C. DasGupta). doi:10.1103/PhysRevE.76.021601

"Biased surface fluctuations due to current stress," Physical Review Letters 99, 206801 (2007) (O. Bondarchuk, W.G. Cullen, M. Degawa and Ellen D. Williams, T. Bole and P.J. Rous). doi:10.1103/PhysRevLett.99.206801

"Persistence and survival in equilibrium step fluctuations," Journal of Statistical Mechanics, P07011 (2007), ( M. Constantin, C. Dasgupta, S. Das Sarma, D. B.Dougherty,E. D. Williams) (Review Article). doi:10.1088/1742-5468/2007/07/P07011

"Metal/molecule interface fluctuations," Nano Letters 7 1495-9 (2007) (Chenggang Tao, T.J. Stasevich, William G. Cullen, T.L. Einstein and Ellen D. Williams). [Journal cover, Highlighted in Nature 446, 472 (2007), and cover art for 2008 NNI Strategic Plan Report)] doi:10.1021/nl070210a

"Atomic Structure of Graphene on SiO2," Nano Letters 7, 1643-8 (2007) (Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams). [Highlighted in Nature 446, 472 (2007)] doi:10.1021/nl070613a

"Facet-edge fluctuations with periphery diffusion kinetics," Surface Sci. 601 3679-83 (2007) (M. Degawa, T.J. Stasevich, A. Pimpinelli, T.L. Einstein, E.D. Williams). doi:10.1016/j.susc.2007.04.097

" Printed Graphene Circuits," Advanced Materials 19, 3623-7 2007 (J.H. Chen, M. Ishigami, C. Jang, D. R. Hines, M. S. Fuhrer, and E. D. Williams) doi:10.1002/adma.200701059

“Percolative Effects on Noise in Pentacene thin film transistors,” Appl. Phys. Letters, 91 242110 (2007) (B. Conrad, W.G. Cullen, W. Yan, and E.D. Williams). doi:10.1063/1.2823577

" Surface morphology and step fluctuations on Ag nanowires, Surface Science 601, 4939-43 (2007), (C. G. Tao, W. G. Cullen, E. D. Williams, S. E. Hunyadi and C. J. Murphy). doi:10.1016/j.susc.2007.08.023

" Temporal step fluctuations on a conductor surface: Electromigration force surface resistivity and low-frequency noise, New Journal of Physics 9 387- (2007), (E.D. Williams, O. Bondarchuk, C.G. Tao, W. Yan, and W.G. Cullen, P.J. Rous and T. Bole). doi:10.1088/1367-2630/9/10/387

A Quantitative Model for Step Decoration: C60 on Ag(111), submitted (2007), ( T. J. Stasevich, Chenggang Tao, William G. Cullen, Ellen D. Williams, and T.L. Einstein.)

“Isotropic interfaces in a structurally anisotropic organic thin film,” in preparation 2007 (C.G. Tao, Q. Liu, B. Riddick, W.G.Cullen, J. Reutt-Robey, J.D. Weeks and E.D. Williams).

2006

"Kinetic Paramters of Pb Obtained from Crystallite Evolution," Japanese Journal of Applied Physics 45 2070-2075 (2006) (M. Degawa, K. Thürmer and E.D. Williams)

"Correlations in nanoscale step fluctuations:  Comparison of simulation and experiments," Physical Review B 73, 115413 (1-10) 2006 (F. Szalma, D.B. Dougherty, M. Degawa, E.D. Williams, M. I. Haftel, T.L. Einstein).

"Step Fluctuations on Ag(111) surfaces with C60". Physical Review B 73, 125436/1-7 (2006) (C. Tao, T.J. Stasevich, T.L. Einstein and E.D. Williams).

"Hooge's constant for carbon nanotube field effect transistors", Applied Physics Letters 88 203116, 2006 (M. Ishigami, J.H. Chen, E.D. Williams, D. Tobias, Y.F. Chen and M.S. Fuhrer).

"Coverage Dependent Supramolecular Structures:  C60:ACA Monolayers on Ag(111)," Journal of the American Chemical Society 128 8493-8499( 2006) (B. Xu, C. Tao, E.D. Williams, J.E. Reutt-Robey).

"Distinctive Fluctuations in a Confined Geometry," Physical Review Letters, 97, 080601 (2006) (M. Degawa, T.J. Stasevich, W.G. Cullen, A.J. Pimpinelli, T.L. Einstein and E.D. Williams). 

"Constrained evolution of Nano-Crystallites," Physical Review B, in press, 2006 (M. Degawa, K. Thürmer and E.D. Williams)

"Transfer Printing Methods for the Fabrication of Flexible Organic Electronics," Journal of Applied Physics, in press (2006) (D.R. Hines, V.W. Ballarotto, E.D. Williams, Y. Shao, S.A. Solin

2005

"Correlation Time for Step Structural Fluctuations," Physical Review B 71 045426(1-10) (2005), (O. Bondarchuk, D.B. Dougherty, M. Degawa, E.D. Williams, M. Constantin, C. Dasgupta and S. Das Sarma)

"Sampling Time Effects for Persistence and Survival in Step Structural Fluctuations," Physical Review E 71 021602(8) (2005) (D.B. Dougherty, C. Tao, O. Bondarchuk, W.G. Cullen,  E.D. Williams, M. Constantin, C. Dasgupta, S.Das Sarma)

"Environmental Sensitivity of Pentacene Thin-Film Transistors," , Mater. Res. Soc. Symp. Proc.  828, A4.4.1 (2005)  (M. Breban, S. Mezhenny, D.R. Hines, D.B. Romero, V.W. Ballarotto and E.D Williams).

"Nanoscale Equilibrium Crystal Shape" Surface Science 583, 126-38 2005 (M. Degawa, F. Szalma and E.D. Williams)

"Transfer Printing of Organic and Carbon Nanotube Thin-Film Transistors on Plastic Substrates" Applied Physics Letters, 86, 163101(3) (2005) (D. R. Hines V. W. Ballarotto, S. Mezhenny, M. Breban, G. Esen, A. Southard, M.S. Fuhrer, E. D. Williams).

"Barriers to shape evolution of supported nano-crystallites,"Surface Science 595, 87-96 (2005) (M. Degawa and E.D. Williams)

"Spiral Evolution in a Confined Geometry," Physical Review Letters 95 225505 (3 pp.) (2005) (Madhav Ranganathan, D. B. Dougherty, W. G. Cullen, Tong Zhao, John D. Weeks, and E. D. Williams)  (Journal cover)

"Photocurrent probe of field-dependent mobility in organic thin-film transistors," Applied Physics Letters 87, 203503-6 (2005) (M. Breban, D. B. Romero, S. Mezhenny, V. W. Ballarotto, and E. D. Williams)

"Chiral Symmetry Breaking in Two-Dimensional C60-ACA Intermixed Systems," Nano Letters 5, 2207-11 (2005) (Bo Xu, Chenggang Tao, William G. Cullen, Janice E. Reutt-Robey, and Ellen D. Williams) (Journal cover)

"A facet is not an island: step-step interactions and the fluctuations of the boundary of a crystal facet," Surface Science 598 L355-360 (2005) (Alberto Pimpinelli. M. Degawa, T.L. Einstein, and Ellen D. Williams)

2004

"Nanoscience for Energy Needs," Report of the March 2004 NNI Grand Challenge  Workshop, Department of Energy, Office of Basic Energy Sciences, Workshop report, (www.nano.gov/nni_energy_rpt.pdf),  (P. Alivisatos, P. Cummings, J. DeYoreo, K. Fichtohorn, B. Gates, R. Hwang, D. Lowndes, A. Majumdar, L. Makowski, T. Michalske, J. Misewich, C. Murray, S. Sibener, C. Teague, E.D. Williams).  {Workshop report.

"Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy," Mat. Res. Soc. Symp. Proc. 803 GG3.9.1 2004 ( K. Siegrist V.W. Ballarotto and E.D. Williams). [ PDF ]

"Triggered Fast Relaxation of Metastable Pb Crystallites", Surface Science 554, 223-244 2004 (D.B. Dougherty, K. Thürmer, M. Degawa, W.G. Cullen, J.E. Reutt-Robey, and E.D. Williams).

"Real-Space Imaging of Current Distributions at the Sub-Micron Scale using Magnetic Force Microscopy: Inversion Methodology," Journal of Applied Physics 95, 2477-86 2004 (P.J. Rous, R. Yongsunthon, A. Stanishevsky, and E.D. Williams).

"Imaging Buried Structures with Photoelectron Emission Microscopy," Applied Physics Letters, 84, 1419-21 2004 (K. Siegrist, V. W. Ballarotto, M. Breban, R. Yongsunthon, and E.D. Williams).

"Nanoscale Structures: Lability, Length Scales, and Fluctuations," Materials Research Society Bulletin, September 2004, p. 621-629 (E.D.Williams), review article.

" Distinguishing Step Relaxation Mechanisms via Pair Correlation Functions," Physical Review B 70 235422(1-5) 2004 (D.B. Dougherty, I. Lyubinetsky, T.L. Einstein, and E.D. Williams).

2003

"Nucleation Limited Crystal Shape Transformations," Surface Science 537, 123-133, 2003 (K. Thürmer, J.E. Reutt-Robey and E.D. Williams).

"Phase Imaging of Buried Structures," Applications of Surface Science, 210, 6-11 2003 (R. Yongsunthon, P.J. Rous, A. Stanishevsky, K. Siegrist, and E.D. Williams).

"Persistence Exponents for Step Edge Diffusion," Surface Science 527, L213-218, 2003 (D.B. Dougherty, O. Bondarchuk, M. Degawa, and E.D. Williams).

"Mapping Electron Flow Using Magnetic Force Microscopy," Applied Physics Letters, 82 3287-9 2003 (R. Yongsunthon, E.D. Williams, A. Stanishevsky, and P.J. Rous).

"Characterizing topography-induced contrast in photoelectron emission microscopy," Journal of Vacuum Science and Technology A21, 1098-102 2003 (K. Siegrist, E.D. Williams, and V. Ballarotto).

"Magnetic Force Microscopy Imaging of Current Paths," Materials Research Society Symposium Proceedings 738, G5.6.1-6 (2003). (R. Yongsunthon, E.D. Williams, A. Stanishevsky, and P. Rous). [ PDF ]

"A study of photoelectron emission microscopy contrast mechanisms relevant to microelectronics,"Proceedings 28th International Symposium for Testing and Failure Analysis," 2002 (V. Ballarotto, K. Siegrist, E.D. Williams, and W. Vanderlinde.)

"Infinite family of persistence exponents for interface fluctuations," Physical Review Letters, 91, 086103 2003 (M. Constantin, S. Das Sarma, C. Dasgupta, O. Bondarchuk, D.B. Dougherty, and E.D. Williams).

"Dewetting Dynamics of Ultrathin Silver Films on Si(111)," Physical Review B68, 155423 2003 (K. Thürmer, E.D. Williams and J.E. Reutt-Robey

2002

"A Model for Doping-Induced Contrast in PEEM," J. Applied Physics 91 469-475, 2002 (V.W. Ballarotto, K. Siegrist, R.J. Phaneuf, and E.D. Williams).

 " Dynamics of step fluctuations on a chemically heterogeneous surface of Al/Si(111)-(÷3¥÷3)," Physical Review B66, 85327-31, 2002 (I. Lyubinetsky, D.B. Dougherty, T.L. Einstein and E.D. Williams).

"Green's Function Propagation of Magnetic Force Microscopy Data," Journal of Applied Physics 92, 156-61, 2002 (R. Yongsunthon, E.D. Williams, J. McCoy, R. Pego, P. Rous).

"Experimental Persistence Probability for Fluctuating Steps," Physical Review Letters 89, 36144-7, 2002 (D.B. Dougherty, I. Lyubinetsky, E.D. Williams, M. Constantin, C. Dasgupta, and S. Das Sarma).

"Magnetic Force Microscopy Signatures of Defects in Current-carrying Lines," Materials Research Society Symposium Proceedings 699, 107-112, 2002 (R. Yongsunthon, E.D. Williams, A. Stanishevsky, P. Rous, J. Mccoy, and R. Pego).

 "Autocatalytic Oxidation of Lead Crystallite Surfaces," Science 297, 2033-5, 2002 (K. Thürmer, E.D. Williams and J. Reutt-Robey).

"Si(111) Step Fluctuations at High Temperature: Anomalous Step-Step Repulsions," Physical Review B66, 115310-5, 2002 (S.D. Cohen, R.D. Schroll, T.L. Einstein, J.-J. Métois, H. G. Bantu, H.L. Richards, and E.D. Williams).

 "Photoelectron Emission Microscopy of Ultra-Thin Oxide Covered Devices," Journal of Vacuum Science and Technology 20, 2514-18, 2002 (V. Ballarotto, M. Breban, K. Siegrist, R.J. Phaneuf, and E.D. Williams).

2001

“Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters,” Applied Surface Science 175-176, 33-5 (2001) (A. Ichimiya, K. Hayashi, E.D. Williams, T.L. Einstein, M. Uwaha, and K. Watanabe).

"Silicon single atom steps as AFM height standards," Proceedings SPIE 4344, 157, 2001 (R. Dixon, N.G. Orji, J.Fu, V. Tsai, E.D. Williams, R. Kacker, T. Vorburger, H. Edwards, D. Cook, P. West, and R. Nyffenegger).

"Scanning Tunneling Spectroscopy of Field-Induced Au Nanodots on Ultrathin Oxides on Si(001), Journal of Vacuum Science and Technology B19 523-6, 2001  (J.-Y. Park, R.J. Phaneuf and E.D. Williams).

"Initial Stage of In-phase Step Wandering on Si(111) Vicinal Surfaces," Surface Science 487, 171-179, 2001, (M. Degawa, K. Thuermer, I. Morishima, H. Minoda, K. Yagi and E.D. Williams).

"Continuous and discontinuous transitions on 3D equilibirum crystal shapes:  A new look at Pb and Au," Surface Science 481 13-24, 2001 (A. Emundts, H.P. Bonzel, P. Wynblatt, K. Thürmer, J. Reutt-Robey, and E.D. Williams).

"Photon-Energy Dependence of Contrast in Photoelectron Emission Microscopy of Semiconductor Devices", Applied Physics Letters 78 3547-9, 2001 (V.W. Ballarotto, K. Siegrist, R. Phaneuf, and E.D. Williams).

"Observation of Current Crowding near Fabricated Voids in Au Lines," Applied Physics Letters 78, 2661-3, 2001, (R. Yongsunthon, A. Stanishevsky, J. McCoy, E.D. Williams).

"Calibrated MFM Measurement of Current-Carrying Lines," Journal of Vacuum Sci. and Technol. A, in press, 2001 (R. Yongsunthon, J. McCoy, E.D. Williams).

"Step Dynamics in 3D Crystal Shape Relaxation," Physical Review Letters, 87 186102-4, 2001, (K. Thuermer, J. Reutt-Robey, E.D. Williams, A. Emunds and H.P. Bonzel).

"Polarization Relaxation Kinetics and 180o Domain Wall Dynamics in Ferroelectric Thin Films," Physical Review B65 014101-6 (2001) (C.S. Ganpule, B.K. Hill, A.L. Roytburd, V. Nagarajan, E.D. Williams, R. Ramesh, and J.F. Scott).

"Step Wandering on Al/Si(111) surface at high temperature," Surface Science  429, L671-6, 2001 (I. Lyubinetsky, D. Daugherty, H.L. Richards, T.L. Einstein, and E.D. Williams).

 "Direct Imaging of a Biased pn Junction with Conductance Mapping", Journal of Applied Physics  in press, 2001) (J.-Y. Park, R.J. Phaneuf, and E.D. Williams).

"A Model for Doping-Induced Contrast in PEEM," J. Applied Physics, 91 3745, 2001 (V.W. Ballarotto, K. Siegrist, R.J. Phaneuf, and E.D. Williams).

2000

"Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters," Physical Review Letters 84 3662-6, 2000 (A. Ichimiya, K. Hayashi, E.D. Williams, T.L. Einstein, M. Uwaha, and K. Watanabe).

Spontaneous Ordering of Oxide Nanostructures," Science 287, 2235-2237 (2000) (S. Aggarwal, A.P. Monga, S.R. Perusse, R. Ramesh, V. Ballarotto, E.D. Williams, B.R. Chalamala, Y. Wei and R.H. Reuss).

"Facet Growth due to Attractive Step-Step Interactions on Vicinal Si(113)," Surface Sci. 452, L287-L292 (2000) (K. Sudoh, H. Iwasaki and E.D. Williams).

  "Decay of Silicon Mounds:  Scaling Laws and Description with Continuum Step Parameters,"  Phys. Rev. Lett. 84 3662-5, 2000 (A. Ichimiya, K. Hayashi, E.D. Williams, T.L. Einstein, M. Uwaha, and K. Watanabe).

"Variation of Threshold Field in Field-Induced Fabrication of Au Nanodots on Ultrathin in-situ Grown Silicon Oxide," Surface Sci. 470, L69-74, 2000 (J.-Y. Park, R.J. Phaneuf, and E.D. Williams).

"PEEM Imaging of Dopant Contrast on Si(001),"  Surface Sci.  461, L570-574, 2000 (V. Ballarotto, K. Siegrist, R.J. Phaneuf, E.D. Williams, and S. Mogren).

"Domain nucleation and relaxation kinetics in ferroelectric thin films, Applied Physics Letters 77 3275-3277, 2000 (C.S. Ganpule, V. Nagarajan, S.B. Ogale, A.L. Roytburd, E.D. Williams, and R. Ramesh).

1999

 "Steps on Surfaces: Experiment and Theory," Surface Sci. Reports, 34, 171-294, 1999, (H.-C. Jeong and E.D. Williams). (Review Article).

"Nonuniversality in Mound Formation during Semiconductor Growth," Phys. Rev. B60, R8469-8472 (1999). (G. Lengel, R.J. Phaneuf, E.D. Williams, S. Das Sarma, W. Beard and F.G. Johnson).

"Characterization of Structures Fabricated by AFM Lithography," Surface Sci. 438 58-67, 1999, (E.S. Fu, X.-S. Wang and E.D. Williams).

"Scaling of Ferroelectric Properties in Thin Films," Appl. Phys. Lett. 75 402-10 (1999). (C.S. Ganpule, A. Stanishevsky, Q. Su, S. Aggarwal, J. Melngailis, E.D. Williams, and R. Ramesh).

"Scaling of Ferroelectric and Piezoelectric Properties in Pt/SrBi2Ta2O9/Pt Thin Films," Applied Phys. Lett. 75 3874-6 (1999) (C.S. Ganpule, A. Stanishevsky, S. Aggarwal, J. Melngailis, E.D. Williams, R. Ramesh, V. Joshi, and C.P.D. Araujo).

"Nanoscale Fluctuations at Solid Surfaces," Physics Today 52 24-28 (1999) (Z. Torozckai and E.D. Williams). (Review Article).

"Onset of Step Anti-banding Instability due to Surface Electromigration," Physical Rev. Lett. 83 5531-4 (1999) (K. Thürmer, D.-J. Liu, J.D. Weeks and E.D. Williams).

1998

"Growth of Si on the Si(111) Surface," Phys. Rev. B. 57, 13132-13148 (1998), (C.J. Lanczycki, Y.-N. Yang, E. Fu, R. Kotlyar, E.D. Williams, and S. Das Sarma)."Conformal Oxides on Si Surface," Appl. Phys. Lett. 71, 1495-1497 (1997), (V. Tsai, X.-D. Wang, E.D. Williams, T.V. Vorburger, R. Dixon, J. Fu, J. Schneir and T. McWaid).

"Evolution of Morphology During Etching of Si," Materials Research Society Symposium Proceedings, 466, 157-166 (1997), (E.D. Williams, E.S. Fu and B. Li).

"Step Structures on Br-Chemical Vicinal Si(111)," Surface Sci. 400, 220-231 (1998), (X.-S. Wang and E.D. Williams).

"Dynamics of Step Bunching During Faceting of Vicinal Si(113) Studied by STM," Scanning Microscopy, in press, 1998, (K. Sudo, T. Yoshinobu, H. Iwasaki, and E.D. Williams).

"Photoelectron Emission Microscopy of Schottky Contacts," Surface Science, 396, 411-421 (1998), (M. Giesen, R. J. Phaneuf, E.D. Williams, and T.L. Einstein).

"Imaging the Depletion Zone in a Si Lateral pn Junction with Scanning Tunneling Microscopy," Applied Physics Letters, 72, 3314-3316 (1998), (M. Hildner, R.J. Phaneuf, and E.D. Williams).

"Evolution of Surface Morphology of Vicinal Si(111) Surfaces after Aluminum Deposition," Surface Science, 418, 22-31 (1998), (C. Schwennicke, X.-S. Wang, T.L. Einstein and E.D. Williams).

"Nanostructure Evolution and Electromigration on Silicon: Experimental Application of Length-Scaling Predictions," Solid State Comm., 107, 681-691 (1998), (E.D. Williams) (Review Article).

"Step Fluctuations on Vicinal Si(113)," Physical Review Lett., 80, 5152-5155 (1998), (K. Sudoh, T. Yoshinobu, H. Iwasaki, E.D. Williams).

1997

"Two Dimensional Facet Nucleation and Growth on Si(111)," Phys. Rev. B55, 7653-7659 (1997), (D.-J. Liu, J.D. Weeks, M.D. Johnson and E.D. Williams).

"The Effective Charge in Surface Electromigration," Surface Science, 385, 259-269 (1997), (E.S. Fu, D.-J. Liu, M.D. Johnson, J.D. Weeks and E.D. Williams).

"Characterization of pn Junctions and Surface States on Silicon Devices by Photo Emission Electron Microscopy," Applied Physics A 64, 423-430 (1997), (M. Giesen, R.J. Phaneuf, E.D. Williams, T.L. Einstein and H. Ibach).

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