[1]
Spatial first-passage statistics of Al/Si(111)-(sqrt(3)×sqrt(3))
step fluctuations
B. R. Conrad, W. G. Cullen, D. B. Dougherty, I. Lyubinetsky, and E. D. Williams
Phys. Rev. E 75, 021603 (2007)
doi:10.1103/PhysRevE.75.021603
[2] Percolative effects on noise in pentacene transistor
B. R.
Conrad, W. G. Cullen, W. Yan, and E. D. Williams
Appl. Phys. Lett. 91, 242110 (2007)
doi:10.1063/1.2823577
[3]
Effect of Impurities on Pentacene Thin Film Growth for Field-Effect
Transistors
Elba Gomar-Nadal, Brad R. Conrad, William G. Cullen, Ellen D. Willams
J. Phys. Chem. C. 112(14); 5646-5650 (2008) doi:10.1021/jp711622z
[4]
Effect of impurities on pentacene island nucleation
Brad R. Conrad, Elba Gomar-Nadal, William G. Cullen, A. Pimpinelli,
T.L. Einstein, Ellen D. Willams
Phys. Rev. B 77, 205328 (2008)
doi:10.1103/PhysRevB.77.205328
[5]
Pentacene islands grown on ultra-thin SiO2
Brad R. Conrad, William G. Cullen, Blake C. Riddick, Ellen D. Willams
Surface Science Letters 603(3); L27-L30 (2009) doi:10.1016/j.susc.2008.12.020
[6]
Surface roughness of ultra-thin and comerical SiO2
Tracy Moore, Brad R. Conrad, Blake C. Riddick, Ellen D. Willams
Submitted
[7]
Interface Studies of C60 and Pentacene
B. R. Conrad, T. Bonnen,G. Dutton, D. B. Dougherty, W. Jin, W. G.
Cullen, E.D. Willams, J. E. Reutt-Robey, S. Robey
Sumitted
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